| Sapphire Ingot | 2” Ingot | 4” Ingot | 6” Ingot |
| A Plane | ±0.2° | ±0.2° | ±0.2° |
| Orientation | (C-A) ±0.1° / (C-M) ±0.1° | (C-A) ±0.1° / (C-M) ±0.1° | (C-A) ±0.1° / (C-M) ±0.1° |
| Primary Flat Length | 16.0 ±0.5mm | 30.0 ±0.5mm | 47.5 ±1.0mm |
| Diameter | 50.9 ± 0.05mm | 100.1 ± 0.1mm | 150.0 ± 0.2mm |
| Length | 40 to 180mm | 40 to 180mm | 40 to 180mm |
| Exclusion Area | <10% | <10% | <10% |
| Circularity | < 0.02mm | < 0.02mm | < 0.02mm |
| Surface Roughness | FG | FG | FG |
| Purity | >99.999% | >99.999% | >99.999% |
| Edge Chips | Edge chips are not in the effective length | Edge chips are not in the effective length | Edge chips are not in the effective length |
| Visual Inspection Quality | No inclusions, polycrystalline areas, block, twins, bubbles, cracks, pits as seen under high intensity light and diffuse illumination | No inclusions, polycrystalline areas, block, twins, bubbles, cracks, pits as seen under high intensity light and diffuse illumination | No inclusions, polycrystalline areas, block, twins, bubbles, cracks, pits as seen under high intensity light and diffuse illumination |
| Mechanical Properties | — | Optical Performance | — |
| Density | 3.97g/cm³ | UV | ＞70% |
| Vickers Hardness | 22Gpa | Visible ~ Near Mid Infrared | ＞87% |
| Tensile Strength | 413.79MPa | Refractive Index | 1.83@255nm |
| 1.76@630nm | |||
| 1.58@5570nm | |||
| Compressive Strength | 2068.97MPa | — | — |
| Young's Modulus | 74×106psi | — | — |
| Poisson's Ratio | 0.28 | — | — |
| Electrical performance | — | Optical Performance | — |
| Conductivity | @25℃＞1018ohm cm | Melting Point | 2050℃ |
| @500℃＞1012ohm cm | |||
| Dielectric constant | Vertical C 9.3 | Thermal Conductivity | 32W/Mk |
| （KHz-I GHz,25°） | (@258℃） | ||
| parallel 11.5（KHz-I GHz,25°） | |||
| Insulation strength | 480,000v/cm | Specific Heat | 1.99J/cm³℃ |
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