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  • 2inch 4inch 6inch patterned sapphire substrate (PSS)
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  • 2inch 4inch 6inch patterned sapphire substrate (PSS)

2inch 4inch 6inch patterned sapphire substrate (PSS)

2inch 4inch patterned sapphire substrate (PSS) is Nanoscale specific regular microstructure patterns are designed and fabricated on sapphire substrate by growth or etching, so as to control the output light form of LED
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2inch 4inch patterned sapphire substrate (PSS)
Patterned sapphire substrate (PSS) is a kind of patterned sapphire substrate with a micron structure on the surface of the sapphire flat substrate through uniform glue, development, etching, and other processes. The transverse growth technology on the graphical substrate will effectively reduce the defects of the epitaxial layer and significantly improve the luminous and luminous efficiency of LED.
Application: GaN-based light-emitting diode (LED), high power device

(Patterned Sapphire Substrate, PSS)
Item 2" 4"
Crystal LED Grade Sapphire LED Grade Sapphire
Sapphire purity ≥99.998% ≥99.998%
Color Transparent Transparent
Orientation C plane tiled M axis 0.20°±0.1° C plane tiled M axis 0.20°±0.1°
Diameter 50.8±0.1mm 100±0.2mm
Thickness 430±10μm 650±10μm
Primary Flat Location A-axis ± 0.2° A-axis ± 0.2°
Flat Length 16.0±1.0 mm 30.0 ±1.0 mm
Front side surface Epi-ready patterned surface Epi-ready patterned surface
Back side surface Fine ground; Ra < 1.2 um Fine ground; Ra < 1.2 um
TTV ≤ 5.0μm ≤ 10μm
BOW ≤ -10μm ≤ -20μm
Pattern diameter 2.7±0.15 um 2.7±0.15 um
Pattern height 1.6±0.15 um 1.6±0.15 um
Pattern space 0.3±0.15 um 0.3±0.15 um
Pattern arrangement Close-packed arrangement; hexagonal type Close-packed arrangement; hexagonal type
Defective patterns Total defective area ≦3% of wafer area; Inspection by naked eye added without bright light Total defective area ≦5% of wafer area; Inspection by naked eye added without bright light
Scratch Visible to naked eye added without bright light; Visible to naked eye added without bright light; 
total length < 3mm total length < 5mm
Package Cleanroom, vacuum packing Cleanroom, vacuum packing

Technical features and advantages:
Advantages of full process processing from cold processing to graphic processing; Large scale mass production capacity.

Product application:
Gallium nitride (GAN) - based light-emitting diodes.
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