Specification:
| Orientation | R-plane, C-plane, A-plane, M-plane or a specified orientation | ||
| Orientation Tolerance | ± 0.3° | ||
| Diameter | 2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others | ||
| Diameter Tolerance | 0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches | ||
| Thickness | 0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others; | ||
| Thickness Tolerance | 25μm | ||
| Primary Flat Length | 16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches | ||
| Primary Flat Orientation | A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2° | ||
| TTV | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches | ||
| BOW | ≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches | ||
| Front Surface | Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations) | ||
| Back Surface | Fine ground (Ra=0.6μm~1.4μm) or Epi-polished | ||
| Packaging | Packaged in class 100 cleanroom environment | ||
Applications:
Growth substrate for III-V and II-VI compounds
Electronics and optoelectronics
IR applications
Silicon On Sapphire Integrated Circuit(SOS)
Radio Frequency Integrated Circuit(RFIC)
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