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4 inch Sapphire Wafer Patterned Sapphire Substrate

4 inch Sapphire Wafer Patterned Sapphire Substrate the mask for dry etching is grown on the sapphire substrate, the pattern is carved by the standard lithography process, the sapphire is etched by ICP etching technology,

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4 inch Sapphire Wafer Patterned Sapphire Substrate
Patterned sapphire substrate (PSS), that is, the mask for dry etching is grown on the sapphire substrate, the pattern is carved by the standard lithography process, the sapphire is etched by ICP etching technology, the mask is removed, and then the GaN material is grown on it so that the longitudinal epitaxy of GaN material becomes transverse epitaxy. On the one hand, it can effectively reduce the dislocation density of Gan epitaxial material, so as to reduce the nonradiative recombination in the active region, reduce the reverse leakage current and improve the service life of LED; On the other hand, the light emitted from the active region is scattered many times through the interface between GaN and sapphire substrate, which changes the exit angle of total reflected light, increases the probability of light emitted from the sapphire substrate by flip led, and improves the light extraction efficiency. Combining these two reasons, the outgoing brightness of LED grown on PSS is greatly higher than that of traditional LED. At the same time, the reverse leakage current is reduced and the service life of LED is prolonged.

With the development of technology in LED field and the rapid growth of the whole LED industry, the research on PSS substrate of GaN-based LED devices is gradually increasing. Nowadays, various manufacturers have adopted PSS technology to improve the light extraction efficiency of LED devices. There are many kinds of PSS graphics, and a common shape similar to conical shape is used, and the graphics period is about 3 μ m. The height is about 1.5 μ m。

WDQ OPTICS provides high purity (up to 99.999%) single crystal sapphire chips for optoelectronic applications, including the high brightness LED market. Our standard Sapphire Wafers range in diameter from 25.4 to 200 mm. Polished or unpolished surfaces with different thicknesses and directions can be customized according to requirements.

Material:	Single crystal sapphire with purity ≥ 99.996%
Crystal direction:	0.2 ± 0.05 °
Angular axis:	0 ± 0.1 °
Flat edge angle:	0 ± 02 °
Diameter:	100 ± 010mm
Flat edge width:	30 ± 10mm
Thickness:	650 ± 10 μ m
Linear deviation:	≤ 3.0 μ m
Flatness:	≤ 5.0 μ m
Warpage:	0 ~ -8.0um
Front roughness:	≤ 02nm
Back surface roughness:	0.8 ≤ RA ≤ 1.2 μ m

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