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Doube Side Polish Sapphire Wafer 2inch 4inch 6inch Sapphire Wafers

Doube Side Polish Sapphire Wafer 2inch 4inch 6inch Sapphire Wafers is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching

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Description

Doube Side Polish Sapphire Wafer 2inch 4inch 6inch Sapphire Wafers
Sapphire is a material of a unique combination of physical, chemical and optical properties, which make it resistant to high temperature, thermal shock, water and sand erosion, and scratching. It is a superior window material for many IR applications from 3µm to 5µm. C-plane sapphire substrates are widely used to grow III-V and II-VI compounds such as GaN for blue LED and laser diodes, while R-plane sapphire substrates are used for the hetero-epitaxial deposition of silicon for microelectronic IC applications.

Features:
All orientations are available, custom orientation is welcome;
Wafer size from 2 to 6 inches are available for all types;
Thin wafer down to 250um for 2 inch, 300um for 4 inch and 300um for 6 inch;

Specification:

Orientation	R-plane, C-plane, A-plane, M-plane or a specified orientation
Orientation Tolerance	± 0.3°
Diameter	2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others
Diameter Tolerance	0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches
Thickness	0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;
Thickness Tolerance	25μm
Primary Flat Length	16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches
Primary Flat Orientation	A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°
TTV	≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches
BOW	≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches
Front Surface	Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)
Back Surface	Fine ground (Ra=0.6μm~1.4μm) or Epi-polished
Packaging	Packaged in class 100 cleanroom environment

Applications:
Growth substrate for III-V and II-VI compounds
Electronics and optoelectronics
IR applications
Silicon On Sapphire Integrated Circuit(SOS)
Radio Frequency Integrated Circuit(RFIC)

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