| Physical property | |||
| Growth method | Czochralski method | ||
| crystal structure | Oblique hexahedron a=b=5.154Å c=13.783Å | ||
| Single crystal purity | > 99.99% | ||
| melting point | 1650℃ | ||
| density | 7.45 g/cm3 | ||
| hardness | 5.5-6 ( mohs) | ||
| Curie temperature | 610℃ | ||
| colour | achromatic colour | ||
| Spectral transmission wavelength | 0.4～5.0mm | ||
| Refractive index | no=2.176 ne=2.180 （633nm） | ||
| Resistance coefficient | 1015wm | ||
| Coefficient of thermal expansion | aa=1.61 (x10-6/℃) ；ac=4.1(x10-6/℃) | ||
| Dielectric constant | es11/eo:39～43 es33/eo:42～43 | ||
| et11/eo:51～54 et33/eo:43～46 | |||
| Product specification | |||
| Item | product | orientation | Size |
| LTB | Crystal rod | X、Y、Z±1° | φ2"×50mm |
| φ3"×50mm | |||
| LTW | Epitaxial polishing wafer | X、Y、Z or YRotate with or without locating edges | 10×10×0.5mm |
| Double throw | φ2"×0.5mm | ||
| Ra<10 Å | φ3"×0.5mm | ||
| Special size and orientation substrates can be provided according to customer requirements | |||
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