Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs.

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Description

Ti:Sapphire Laser Crystals
Titanium doped Sapphire (Ti:Sapphire) is the most widely used laser crystal for widely tunable and ultrashort pulsed lasers with high gain and high power outputs. The Ti:Sapphire crystals of Shalom EO is grown by the method of Temperature Gradient Technique (TGT), the large-sized (Dia.30x 30mm) Ti: Sapphire crystal in high quality free of light scatter, with the dislocation density less than 10²cm^-2 could be provided. The TGT grown sapphire crystal is characterized by the (0001) oriented growth, high doping level (a490= 4.0cm^-1), high gain and laser damage threshold.

Feature
Excellent thermal conductivity
Larger gain bandwidth
High laser cross-section
Excellent for wavelength-tunable lasers and ultra-fast pulsed lasers

Specifications:

Orientation	Optical axis C normal to rod axis	Ti2O3 Concentration	0.06 - 0.26atm %
Figure Of Merit(FOM)	100~200	α490	1.0-4.0cm^-1
Diameter	2-30mm or specified	Path Length	2-30mm or specified
End Configurations	Flat/Flat or Brewster/Brewster ends	Flatness	<λ/10 @ 633nm
Parallelism	<10 arc sec	Surface Finishing	<20/10scratch/dig to MIL-PRF-13830B
Wavefront Distortion	<λ/4 per inch

Physical and Optical Properties:

Chemical Formula	Ti³⁺: Al2O3	Crystal Structure	Hexagonal
Lattice Constants	a=4.758, c=12.991	Density	3.98 g/cm³
Melting Point	2040℃	Mohs Hardness	9
Thermal Conductivity	52 W/m/k