| Strontium Tantalum Lanthanum Aluminate | |
| Growth Method | Tira Method |
| Crystal Structure | Cubic (a = 3.868 Å) |
| Density | 6.74g/cm3 |
| Purity | 99.99% |
| Coefficient Of Thermal Expansion | 10.4ppm0℃ |
| Dielectric Constant | Twenty-two |
| Crystal Orientation | < 100 >, < 110 >, < 111 > ± 0.5o, Or Special Direction |
| Size | Dia2” × 0.5mm, 25 × Twenty-five × 0.5mm, 15 × Fifteen × 0.5mm 10 × Ten × 0.5mm, 10 × Five × 0.5mm, 5 × Five × 0.5mm |
| Polishing | Single Or Double Sided Polishing |
| Surface Roughness | ≤5Å |
| Encapsulation | Class 100 Ultra Clean Bag, Single Or Multi Wafer Box |
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