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  • High Temperature Superconducting Thin Film Single Crystal Wafer Substrate Strontium Sitanate (SrTiO3) Substrate
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  • High Temperature Superconducting Thin Film Single Crystal Wafer Substrate Strontium Sitanate (SrTiO3) Substrate

High Temperature Superconducting Thin Film Single Crystal Wafer Substrate Strontium Sitanate (SrTiO3) Substrate

High Temperature Superconducting Thin Film Single Crystal Substrate Strontium Sitanate (SrTiO3) Substrate
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High Temperature Superconducting Thin Film Single Crystal Substrate Strontium Sitanate (SrTiO3) Substrate

SrTiO3 single crystal has the good lattice structure of perovskite structure materials. It is an excellent substrate material for the epitaxial growth of HTS and most oxide films. It has been widely used in the research of high temperature superconducting films, as well as special optical windows and high-quality sputtering targets.

Parameter
SrTiO3 Crystal and substrate
Growth Method Flame Method
Crystal Structure Cubic (a = 3.905 Å)
Density 5.175g/cm3
Purity Intrinsic, Lightly Doped, Heavily Doped
Coefficient Of Thermal Expansion 10.4ppm/℃
Dielectric Constant Nine Point Eight
Crystal Orientation < 100 >, < 110 >, < 111 > ± 0.5o, Or Special Direction
Size Dia30 × 0.5mm, 20 × Twenty × 0.5mm, 15 × Fifteen × 0.5mm 10 × Ten × 0.5mm, 10 × Five × 0.5mm, 5 × Five × 0.5mm
Polishing Single Or Double Sided Polishing
Surface Roughness ≤5Å
Encapsulation Class 100 Ultra Clean Bag, Single Or Multi Wafer Box
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