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Sapphire Wafers Sapphire Substrate

Sapphire Wafers Sapphire Substrate is an excellent multifunctional material. It is widely used in many fields of industry, national defense, and scientific research (such as high temperature resistant infrared windows, etc.).

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Sapphire Wafers Sapphire Substrate
Sapphire single crystal is an excellent multifunctional material. It is widely used in many fields of industry, national defense, and scientific research (such as high temperature resistant infrared windows, etc.).

Industrial application of sapphire single crystal wafer substrate
Sapphire single crystal is an excellent multifunctional material. It can be widely used in many fields such as industry, national defense, and scientific research (such as high temperature resistant infrared windows). At the same time, it is also a widely used single-crystal substrate material. It is not only the pre-selected substrate for blue, purple, and white light-emitting diodes (LEDs) and blue laser (LD) industries (gallium nitride film needs to be epitaxial on the sapphire substrate), but also an important superconducting thin film substrate. In addition to making Y-series and La series high-temperature superconducting films, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting films.
Sapphire wafer thickness
100um、280um、300um、350um、430um、500um、650um、1mm。
Sapphire wafer size
2 inches, 4 inches, 6 inches, and cut small pieces.

The crystal orientation of sapphire single crystal wafer
C, m and R directions; Single throw, double throw.
R-direction sapphire wafer
Epitaxial long crystals of different deposited silicon materials grown on the r-direction substrate are applied to microelectronic integrated circuits. In addition, high-speed integrated circuits and pressure sensors can be formed in the process of epitaxial silicon growth. R-type substrate can also be used to grow mounds, other superconducting components, high resistance resistors and gallium arsenide. It's a little harder to cut than a.
C-direction sapphire wafer
C-direction sapphire substrate is used to grow III-V and II-VI deposited films, such as gallium nitride, which can produce blue LED products, laser diodes and infrared detectors. This is mainly because the process of sapphire crystal growing along the c-axis is mature, the cost is relatively low, the physical and chemical properties are stable, and the technology of epitaxy on the C-plane is mature and stable. C-axis has crystalline light, and other axes have negative light; Plane C is a plane, preferably tangent.
M-direction sapphire chip
The m-plane is a stepped sawtooth, which is difficult to cut and easy to crack. It is mainly used to grow non-polar / semi-polar surface Gan epitaxial films to improve luminous efficiency.
A-direction sapphire wafer
The hardness in direction a is significantly higher than that in direction C, which is characterized by wear resistance, scratch resistance and high hardness; Surface a is a Z-shaped serrated surface, which is easy to cut; A-direction substrate produces uniform permittivity / dielectric, and high insulation is applied in Hybrid Microelectronics Technology. High temperature superconductors can be produced by long crystals of A-type substrate.

Sapphire wafer processing
Patterned sapphire substrate (PSS): a nanoscale specific regular microstructure pattern is designed and fabricated on the sapphire substrate by growth or etching, so as to control the output light form of LED, reduce the differential arrangement defects between Gan grown on the sapphire substrate, improve the epitaxial quality, and improve the internal quantum efficiency of LED Increase light extraction efficiency. In addition, we can process and customize sapphire prism, surface mirror, lens, hole parts, cone and other structural parts according to customer requirements.

Crystal Materials	99,996% of Al2O3,High Purity, Monocrystalline, Al2O3
Crystal quality	Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Diameter	2inch	3inch	4inch	5inch ～ 7inch
	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	In accordance with the provisions of standard production
	50.8± 0.1mm	76.2±0.2mm	100±0.3mm	In accordance with the provisions of standard production
Thickness	430±15µm	550±15µm	650±20µm	Can be customized by customer
Orientation	C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle
Primary flat length	16.0±1mm	22.0±1.0mm	32.5±1.5 mm	In accordance with the provisions of standard production
Primary flat Orientation	A-plane (1 1-2 0 ) ± 0.2°
TTV	≤10µm	≤15µm	≤20µm	≤30µm
LTV	≤10µm	≤15µm	≤20µm	≤30µm
TIR	≤10µm	≤15µm	≤20µm	≤30µm
BOW	≤10µm	≤15µm	≤20µm	≤30µm
Warp	≤10µm	≤15µm	≤20µm	≤30µm
Front Surface	Epi-Polished (Ra< 0.2nm)
Back Surface	Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm)
Note	Can provide high-quality sapphire substrate wafer according to customers' specific requirement

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