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  • Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer
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  • Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer

Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer

Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer
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Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer

GaAs is a new semiconductor material with the most in-depth research and the most extensive application after Si. It has the characteristics of high mobility, wide band gap and high-temperature resistance. It is mainly used in high frequency communication, wireless network and optoelectronic fields, such as LED illuminators, solar panels, etc. We can provide intrinsic, lightly doped and heavily doped (Si, Zn doped).
Parameter
GaAs Crystal and Substrate
Growth Method LEC,HB
Crystal Structure cube
Density 5.37g/cm3
Purity Intrinsic (99.9999%), light doping, heavy doping
Crystal Orientation Type N, < 100 > 15 °
Type P, < 100 >
Intrinsic, < 100 >
Size Φ 1″~8″ × (0.25~200)mm
Polishing Single or double sided polishing
Surface Roughness Dislocation density < 105
Encapsulation Class 100 ultra-clean bag, single or multi wafer box
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