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Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer
Semiconductor Single-Crystal Substrate Gallium Arsenide (GaAs) Crystal Wafer
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| GaAs Crystal and Substrate | |
| Growth Method | LEC,HB |
| Crystal Structure | cube |
| Density | 5.37g/cm3 |
| Purity | Intrinsic (99.9999%), light doping, heavy doping |
| Crystal Orientation | Type N, < 100 > 15 ° |
| Type P, < 100 > | |
| Intrinsic, < 100 > | |
| Size | Φ 1″~8″ × (0.25~200)mm |
| Polishing | Single or double sided polishing |
| Surface Roughness | Dislocation density < 105 |
| Encapsulation | Class 100 ultra-clean bag, single or multi wafer box |
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