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  • Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer
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  • Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer

Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer

Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer
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  • Description
Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer
As the main substrate material for the production of red and green LEDs, it is also the substrate material with the largest amount of LED production. We can provide intrinsic, lightly doped and heavily doped (S-doped) single crystal gap wafer.
Parameter
GaP crystal and substrate
Growth Direction LEC
Crystal Structure cube
Density 4.13g/cm3
Purity Intrinsic (99.9999%), light doping, heavy doping
Crystal Orientation < 110 >± 0.5 °, or special direction
Size Φ 50″ × (0.3~200)mm
Polishing Single or double sided
Surface Roughness ≤5Å
Encapsulation Class 100 ultra clean bag, single or multi wafer box
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