1/1
Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer
Semiconductor Single-Crystal Substrate Gallium Phosphide (GAP) Wafer
(0 Reviews)
| GaP crystal and substrate | |
| Growth Direction | LEC |
| Crystal Structure | cube |
| Density | 4.13g/cm3 |
| Purity | Intrinsic (99.9999%), light doping, heavy doping |
| Crystal Orientation | < 110 >± 0.5 °, or special direction |
| Size | Φ 50″ × (0.3~200)mm |
| Polishing | Single or double sided |
| Surface Roughness | ≤5Å |
| Encapsulation | Class 100 ultra clean bag, single or multi wafer box |
Adding to cart succeed!
items in cart.
Total:
Requires a minimum purchase of {MinPrice}. And you still need to meet the requirements.
Proceed to Checkout Return to Shopping