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  • Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer
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  • Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer

Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer

Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer
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  • Description
Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer
Making semiconductor devices, infrared optical devices and solar cell substrates. We can provide intrinsic, lightly doped and heavily doped (sb, in or GA doped) single crystal Ge wafer
Parameter
Germanium (GE) crystal and substrate
Growth Method Tira method
Crystal Structure cube
Density 5.323g/cm3
Purity Intrinsic (99.9999%), light doping, heavy doping
Crystal Orientation < 100 >, < 111 > and < 110 >± 0.5 ° or special direction
Size Φ 1″~8″ × (0.3~200)mm
Polishing Single or double sided polishing
Surface Roughness ≤5Å
Encapsulation Class 100 ultra clean bag, single or multi wafer box
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