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Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer
Semiconductor Single-Crystal Substrate Germanium Substrate Ge Wafer
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| Germanium (GE) crystal and substrate | |
| Growth Method | Tira method |
| Crystal Structure | cube |
| Density | 5.323g/cm3 |
| Purity | Intrinsic (99.9999%), light doping, heavy doping |
| Crystal Orientation | < 100 >, < 111 > and < 110 >± 0.5 ° or special direction |
| Size | Φ 1″~8″ × (0.3~200)mm |
| Polishing | Single or double sided polishing |
| Surface Roughness | ≤5Å |
| Encapsulation | Class 100 ultra clean bag, single or multi wafer box |
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